Samsung launches new 512 GB eUFS memory chips for mobile devices


Samsung did mention on its press release that the 512GB eUFS will be used for its "upcoming flagship smartphones and tablets". An industry first, these capacious storage components are fabricated from eight 64-layer 512Gb Samsung V-NAND chips plus a controller chip in a package as pictured below. It may not make much sense having a 512GB ROM and still feel the need to expand it via a microSD card, something that could tempt Samsung into doing what it did with the Galaxy S6 and Galaxy Note 5. Samsung says that its fast eUFS storage is flawless for next gen devices which could bump into "potential limitations in system performance that can occur with the use of micro SD cards".

Samsung's also announced that it "intends to steadily increase an aggressive production volume for its 64-layer 512Gb V-NAND chips, in addition to expanding its 256Gb V-NAND production".

Given the timing of the announcement, it is only a matter of time before manufacturers adopt the 512GB eUFS solution into their products especially in mobile devices. For example, the new high-capacity eUFS enables a flagship smartphone to store approximately 130 4K Ultra HD (3840x2160) video clips of a 10-minute duration, * which is about a tenfold increase over a 64GB eUFS which allows storing only about 13 of the same-sized video clips. A full, 5GB HD video can be transferred from 512GB chip to a solid-state hard drive in about six seconds, Samsung says, which is over eight times faster than it takes to transfer one from a typical microSD card.

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When will the first devices packing Samsung's 512GB eUFS storage launch?

Samsung also injected its 512GB eUFS solution with a new of proprietary technologies, including an advanced circuit design and new power management technology in the controller to minimize energy consumption. Still, we do know Samsung has a habit of using a bunch of similar specs on these two classes and we don't expect anything different come 2018. The top candidate right now is the Galaxy S9, which is expected to be Samsung's next flagship Android smartphone. Samsung describes the 512GB eUFS performance as strong with internal testing revealing sequential read and write speeds reaching 860MB/s and 255MB/s respectively.